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DBL1010HB-100M-R Integrated Circuit Chip 7-18V 1KHZ Low Noise

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DBL1010HB-100M-R Integrated Circuit Chip 7-18V 1KHZ Low Noise

Brand Name : original

Model Number : DBL1010HB-100M-R

Certification : original

Place of Origin : original

MOQ : 1

Price : negotiation

Payment Terms : T/T

Supply Ability : 100,000

Delivery Time : 1-3working days

Packaging Details : carton box

Diode Configuration : 1 Pair Common Cathode

Technology : Schottky

Voltage - DC Reverse (Vr) (Max) : 170 V

Current - Average Rectified (Io) (per Diode) : 8A

Voltage - Forward (Vf) (Max) @ If : 920 mV @ 8 A

Speed : Fast Recovery =< 500ns, > 200mA (Io)

Current - Reverse Leakage @ Vr : 15 µA @ 170 V

Operating Temperature - Junction : 175°C (Max)

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DBL1010HB-100M-R Integrated Circuit Chip 7-18V 1KHZ Low Noise

Unless otherwise specified, Vcc=10V, f=1KHz, Rg=600, RL=10K. Ta=25°C

Specifications of DBL1010HB-100M-R

(Unless otherwise specified, Vcc=10V, f=1KHz, Rg=600, RL=10K. Ta=25°C)

Characteristics symbol Test circuit Test Conditions mine type maximum unit
Quiescent Current ICCO 1 - 5.5 8.5 mA
Open loop voltage gain GVO 1 Cf=100μF, Rf=0 - 100 - dB
Equivalent input VOM 2

THD 0.5%,

NAB equalization

2 2.8 Vrms
noise voltage VNI 2 Rg=2.2kΩ BPF15HZ-30kHz - 1 2.5 µVrms
input resistance RIN 2 Vo=1Vrms - 100 -
channel separation CHSEP 2 f=10kHz, Rg 2.2kΩ
Vo=1Vrms
- 70 - dB
Ripple rejection R.R. 2 f=100Hz, VIN=1Vrms
CB connectionless
- 50 - dB
Muting ratio M.R. 2 Vg=1V, OdB 1 Vrms. 80 - dB

Features of DBL1010HB-100M-R

* High Voltage Gain: Gvo 100dB (Typ) at f=1kHz
* Excellent channel separation and high ripple
rejection: CHSEP. 70dB (Typ)
R.R.=50dB(Typ.)
* Low Noise: VNI = 1.0μVrms (Typ)
At Rg 2.2k.Ω = 15Hz-30kHz
* Muting circuit built-in: 2V≧V9≧0.9V
* Wide operating supply voltage range: Vcc = 7-18V.

Applications of DBL1010HB-100M-R

* Car or home stereo use.
* DBL 1010 is 8 SIP, Pin9 (Function: Muteing) cut.

DBL1010HB-100M-R Integrated Circuit Chip 7-18V 1KHZ Low Noise


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