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FDN358P Transistor Integrated Circuit P Channel 30V 1.5A 500mW Sot23 3 Package

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FDN358P Transistor Integrated Circuit P Channel 30V 1.5A 500mW Sot23 3 Package

Brand Name : Original

Model Number : FDN358P

Certification : Original

Place of Origin : Original

MOQ : 1

Price : negotiation

Payment Terms : T/T

Supply Ability : 100,000

Delivery Time : 1-3working days

Packaging Details : carton box

FDN335N Transistor IC Chip P-Channel 20 V 1.7A 1W Surface Mount SOT-23 : 30 V

Current - Continuous Drain (Id) @ 25°C : 1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 125mOhm @ 1.5A, 10V

Gate Charge (Qg) (Max) @ Vgs : 5.6 nC @ 10 V

Vgs (Max) : ±20V

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FDN358P Transistor IC Chip P-Channel 20 V 1.7A 1W Surface Mount SOT-23

FDN358P P-Channel 30 V 1.5A (Ta) 500mW (Ta) Surface Mount SOT-23-3

Features of FDN358P

–1.5 A, –30 V. RDS(ON) = 125 mΩ @ VGS = –10 V RDS(ON) = 200 mΩ @ VGS = –4.5 V
• Low gate charge (4 nC typical)
• High performance trench technology for extremely low RDS(ON) .
• High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability.

Product Attributes of FDN358P

Product
FDN358P
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
125mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.6 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
182 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
FDN358

Environmental & Export Classifications of FDN358P

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095

FDN358P Transistor Integrated Circuit P Channel 30V 1.5A 500mW Sot23 3 Package


Product Tags:

P Channel FDN358P

      

FDN358P 30V 1.5A

      

Sot23 3 Package Transistor Integrated Circuit

      
Wholesale FDN358P Transistor Integrated Circuit P Channel 30V 1.5A 500mW Sot23 3 Package from china suppliers

FDN358P Transistor Integrated Circuit P Channel 30V 1.5A 500mW Sot23 3 Package Images

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